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Same model may have multiple batches, images only for reference.
IXTX4N300P3HV Real Image
Same model may have multiple batches, images only for reference.

IXTX4N300P3HV

Part No IXTX4N300P3HV
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description 2000V TO 3000V POLAR3 POWER MOSF / High Voltage Power MOSFET
Datasheet
IXTX4N300P3HV Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 3000V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs 139nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 3680pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 960W (Tc)
Rds On (Maximum) @ Id, Vgs 12.5 Ohm @ 2A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247HV
Package TO-247-3 Variant
Win Source Part Number 777666-IXTX4N300P3HV
Popularity Medium
Supply and Demand Status Limited
Halogen Free Compliant
Estimated EOL Date 2029
Ultra Librarian 3D Model Ultra Librarian IXTX4N300P3HV CAD Model

Description

The IXYS IXTX4N300P3HV MOSFET designed for use in discrete semiconductor products manufactured by IXYS.

  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Win Source Part Number: 777666-IXTX4N300P3HV

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