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Same model may have multiple batches, images only for reference.
IXTY01N100D Real Image
Same model may have multiple batches, images only for reference.

IXTY01N100D

Part No IXTY01N100D
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH Si 1KV 3-Pin(2+Tab) DPAK / MOSFET N-CH 1000V 0.1A TO-252AA
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 1000V (1kV)
Continuous Drain Current at 25°C 100mA (Tc)
Max Input Capacitance 120pF @ 25V
Maximum Gate-Source Voltage ±20V
FET Feature Depletion Mode
Power Dissipation (Max) 1.1W (Ta), 25W (Tc)
Maximum Rds On at Id,Vgs 110 Ohm @ 50mA, 0V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252, (D-Pak)
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 205719-IXTY01N100D
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Family Name IXTY01N100D
Introduction Date June 16, 2017
ECCN EAR99
Country of Origin Republic of Korea
Estimated EOL Date 2033
Ultra Librarian 3D Model Ultra Librarian IXTY01N100D CAD Model

Description

The IXYS IXTY01N100D is a N-Channel MOSFET manufactured by IXYS.

  • Feature: Depletion mode FET
  • Maximum Power Dissipation: 1.1W (Ta) and 25W (Tc)
  • Technology: SMD (SMT)
  • Polarity: N-Channel
  • Drain-Source Breakdown Voltage: 1000V (1kV)
  • Continuous Drain Current @ 25°C: 100mA (Tc)
  • Maximum Rds On: 110 Ohm @ 50mA, 0V
  • Package: TO-252, (D-Pak) package
  • Dimensions: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Input Capacitance: 120pF @ 25V
  • Status: Active
  • Estimated EOL Date: 2033

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.6445 $53.1560
19+ $5.4519 $103.5861
29+ $5.2815 $153.1635
40+ $5.1112 $204.4480
51+ $4.9408 $251.9808
68+ $4.4297 $301.2196
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Availability: 500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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