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Same model may have multiple batches, images only for reference.
IXTY12N06T Real Image
Same model may have multiple batches, images only for reference.

IXTY12N06T

Part No IXTY12N06T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 12A TO-252
Datasheet
IXTY12N06T Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 3.4nC @ 10V
Max Input Capacitance 256pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 85 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049970-IXTY12N06T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTY12N06T CAD Model

Description

It is a reliable component that can be used in various electronic devices.

  • Manufacturer: IXYS
  • Win Source Part Number: 1049970
  • Product: IXTY12N06T
  • Application: High-Performance MOSFET
  • Status: Obsolete

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