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IXTY18P10T

Part No IXTY18P10T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 100V 18A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 39nC @ 10V
Max Input Capacitance 2100pF @ 25V
Maximum Gate-Source Voltage ±15V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 120 mOhm @ 9A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049971-IXTY18P10T
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian IXTY18P10T CAD Model

Description

The IXYS 1049971-IXTY18P10T is a powerful electronic component that is widely used in discrete semiconductor products.

  • Manufacturer: IXYS
  • Application: Discrete semiconductor products
  • Compact Size: Yes
  • High Power Dissipation: Yes
  • Easy to Integrate: Yes
  • Sufficient Supply and Demand Status: Yes
  • High Performance: Yes
  • Reliable Operation: Yes
  • High-Quality Specifications: Yes
  • Superior Performance: Yes
  • Preferred Choice: Yes

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Pricing & Ordering

Quantity Unit Price Ext. Price
10+ $5.0933 $50.9330
24+ $4.1792 $100.3008
38+ $4.0486 $153.8468
52+ $3.9180 $203.7360
67+ $3.7874 $253.7558
89+ $3.3956 $302.2084
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 100 pieces
MOQ: 10 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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