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Same model may have multiple batches, images only for reference.
IRFZ34STRLPBF Real Image
Same model may have multiple batches, images only for reference.

IRFZ34STRLPBF

Part No IRFZ34STRLPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 30A D2PAK
Datasheet
IRFZ34STRLPBF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 46nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 3.7W (Ta), 88W (Tc)
Maximum Rds On at Id,Vgs 50 mOhm @ 18A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package D2PAK
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1047240-IRFZ34STRLPBF
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IRFZ34STRLPBF CAD Model

Description

The Vishay 1047240-IRFZ34STRLPBF is an N-Channel polarity type MOSFET semiconductor device designed for use in discrete semiconductor products.

  • Maximum Power Dissipation: 3.7W (Ta) and 88W (Tc)
  • Drain-Source Breakdown Voltage: 60V
  • Mounting Technology: SMD (SMT)
  • Package: D2PAK
  • Maximum Rds On @ Id,Vgs: 50 mOhm @ 18A, 10V
  • Temperature Range: -55°C to 175°C (TJ)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 46nC @ 10V
  • Maximum Input Capacitance: 1200pF @ 25V
  • Supply and Demand Status: Balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $10.1866 $50.9330
12+ $8.3583 $100.2996
19+ $8.0971 $153.8449
26+ $7.8359 $203.7334
34+ $7.5747 $257.5398
45+ $6.7911 $305.5995
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