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Same model may have multiple batches, images only for reference.
IXTY4N60P Real Image
Same model may have multiple batches, images only for reference.

IXTY4N60P

Part No IXTY4N60P
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-252
Datasheet
IXTY4N60P Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 600V
Continuous Drain Current at 25°C 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 5.5V @ 100μA
Max Gate Charge 13nC @ 10V
Max Input Capacitance 635pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 89W (Tc)
Maximum Rds On at Id,Vgs 2 Ohm @ 2A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049981-IXTY4N60P
Popularity Medium
Supply and Demand Status Balance
Quantity per package 70
Ultra Librarian 3D Model Ultra Librarian IXTY4N60P CAD Model

Description

The IXTP4N60P is an N-channel MOSFET transistor from IXYS.

  • Mounting Type: Surface Mount
  • Polarity: N-Channel
  • Package: TO-252
  • Power Dissipation: 89W (Tc)
  • Drain-Source Breakdown Voltage: 600V
  • Continuous Drain Current at 25°C: 4A (Tc)
  • Gate-Source Threshold Voltage: 5.5V @ 100μA
  • Maximum Gate Charge: 13nC @ 10V
  • Maximum Input Capacitance: 635pF @ 25V
  • Maximum Rds On at Id, Vgs: 2 Ohm @ 2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Supply and Demand Status: balanced
  • Packaging: Tube/Rail
  • Quantity per Package: 70

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