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IXTY55N075T

Part No IXTY55N075T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 75V 55A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 75V
Continuous Drain Current at 25°C 55A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 33nC @ 10V
Max Input Capacitance 1400pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 19.5 mOhm @ 27.5A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049982-IXTY55N075T
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IXTY55N075T CAD Model

Description

The IXYS 1049982-IXTY55N075T is a MOSFET discrete semiconductor product with a N-channel polarity.

  • Power Dissipation: 130W (Tc)
  • Case: TO-252
  • Supply and Demand Status: balanced
  • Maximum Rds On at Id,Vgs: 19.5 mOhm @ 27.5A, 10V
  • Maximum Gate-Source Voltage: ±20V

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