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IXTY64N055T

Part No IXTY64N055T
Manufacturer IXYS
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 55V 64A TO-252
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer IXYS
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 55V
Continuous Drain Current at 25°C 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 25μA
Max Gate Charge 37nC @ 10V
Max Input Capacitance 1420pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 130W (Tc)
Maximum Rds On at Id,Vgs 13 mOhm @ 500mA, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package TO-252
Dimension TO-252-3, DPak (2 Leads + Tab), SC-63
Win Source Part Number 1049983-IXTY64N055T
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IXTY64N055T CAD Model

Description

The IXYS IXTY64N055T is an N-channel MOSFET transistor with a drain-source breakdown voltage of 55V and a continuous drain current of 64A @ 25°C.

  • Drain-Source Breakdown Voltage: 55V
  • Continuous Drain Current: 64A @ 25°C
  • Maximum On-Resistance: 13mOhm @ 500mA and 10V
  • Gate Threshold Voltage: 4V @ 25μA
  • Package: TO-252
  • Maximum Power Dissipation: 130W @ Tc
  • Gate Charge: 37nC @ 10V
  • Operating Temperature Range: from -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
18+ $3.2710 $58.8780
44+ $2.6842 $118.1048
67+ $2.5999 $174.1933
92+ $2.5167 $231.5364
119+ $2.4324 $289.4556
159+ $2.1806 $346.7154
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 87,500 pieces
MOQ: 18 pcs
Order Increment : 1 pcs
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