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Same model may have multiple batches, images only for reference.
IXXH60N65B4 IXYS
Same model may have multiple batches, images only for reference.

IXXH60N65B4

Part No IXXH60N65B4
Manufacturer IXYS
Catalog IGBTs - Single
Description IGBT 650V 116A 455W TO247AD / IGBT PT 650 V 116 A 455 W Through Hole TO-247AD (IXXH)
Datasheet
IXXH60N65B4 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series GenX4™, XPT™
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 116 A
Current - Collector Pulsed (Icm) 250 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 60A
Power - Max 455 W
Switching Energy 3.13mJ (on), 1.15mJ (off)
Input Type Standard
Gate Charge 95 nC
Td (on/off) @ 25°C 37ns/145ns
Test Condition 400V, 60A, 5Ohm, 15V
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD (IXXH)
Base Product Number IXXH60
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1355067-IXXH60N65B4
Ultra Librarian 3D Model Ultra Librarian IXXH60N65B4 CAD Model

Description

The IXXH60N65B4 is a single IGBT transistor manufactured by IXYS.

  • Series: GenX4™ and XPT™
  • Packaging: Tube
  • Operating Temperature: -55°C to 175°C
  • Collector Current (Ic): 116A
  • Collector-Emitter Breakdown Voltage: 650V
  • Power: 455W
  • Mounting Type: Through Hole

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