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Same model may have multiple batches, images only for reference.
IXYN50N170CV1IXYS
Same model may have multiple batches, images only for reference.

IXYN50N170CV1

Part No IXYN50N170CV1
Manufacturer IXYS
Catalog Transistors (BJT) - Single
Description IGBT 1700V 120A SOT227B
Datasheet
IXYN50N170CV1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202318-IXYN50N170CV1
Win Source Part Number Cross
Manufacturer IXYS
Category Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Series XPT™
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1700 V
Current - Collector (Ic) (Max) 120 A
Current - Collector Pulsed (Icm) 485 A
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 50A
Ultra Librarian 3D Model Ultra Librarian IXYN50N170CV1 CAD Model

Description

The IXYS IGBT (Insulated Gate Bipolar Transistor) is a high-power semiconductor device used for switching and amplification in various applications.

  • Series: XPT™
  • Configuration: single IGBT
  • Collector-Emitter Breakdown Voltage (Vce): 1700 V
  • Maximum Collector Current (Ic): 120 A
  • Pulsed Current: up to 485 A
  • On-State Voltage (Vce(on)): 3.7V @ 15V, 50A
  • Package: tube
  • Manufacturer: IXYS

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