The KHB4D0N80P1 is a high voltage power MOSFET manufactured by KEC (Korea Electronics Co., Ltd.). It is an N-channel MOSFET designed for use in switching power supplies and other high voltage applications. The device features low on-resistance and fast switching speed, enabling high efficiency and compact designs.

Applications

• Switching power supplies (SMPS)
• AC-DC adapters
• Lighting ballasts
• DC-DC converters
• Power factor correction (PFC) circuits

Features

• High voltage rating (800V)
• Low on-resistance (RDS(on))
• Fast switching speed
• High avalanche ruggedness
• RoHS compliant

Benefits

• High efficiency due to low conduction losses
• Reduced heat sink requirements
• Improved system reliability
• Simplified circuit design
• Environmentally friendly

Additional Details

The KHB4D0N80P1 is an N-channel enhancement mode MOSFET. Key specifications include drain-source voltage (VDS), gate-source voltage (VGS), and continuous drain current (ID). The device is available in a TO-220 or similar package. Detailed electrical characteristics and thermal performance data can be found in the official KEC datasheet. The high voltage rating allows for use in applications with high voltage stress.