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KMB3D5N40SA

Part No KMB3D5N40SA
Manufacturer KEC
Description N-Ch Trench MOSFET
Sample
Rohs State rohs
ECAD Module
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Manufacturer KEC
Win Source Part Number 1193279-KMB3D5N40SA
Manufacturer Homepage www.keccorp.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian KMB3D5N40SA CAD Model

Description

The KMB3D5N40SA is a 400V, 3.5A N-Channel MOSFET from KEC, designed for efficient power switching applications. It's characterized by a low on-resistance, enabling reduced power losses and improved energy efficiency. This component finds application in various power supply and motor control systems.

Applications

      
  • Switch-Mode Power Supplies (SMPS)
  •   
  • Power Factor Correction (PFC) circuits
  •   
  • DC-DC Converters
  •   
  • Motor Control Applications
  •   
  • Lighting Systems

Features

      
  • N-Channel MOSFET
  •   
  • High Voltage Rating: 400V
  •   
  • Continuous Drain Current: 3.5A
  •   
  • Low On-Resistance (RDS(on))
  •   
  • Fast Switching Speed
  •   
  • RoHS Compliant

Benefits

      
  • Improved Efficiency: Low on-resistance minimizes conduction losses, enhancing overall system efficiency.
  •   
  • High Voltage Capability: Suitable for applications with higher voltage requirements, ensuring reliable performance.
  •   
  • Fast Switching Performance: Reduces switching losses and improves the performance of high-frequency circuits.
  •   
  • Enhanced Thermal Performance: Designed for efficient heat dissipation, ensuring stable operation even under high load conditions.
  •   
  • Robust Design: Provides reliable and stable performance in demanding power applications.

Technical Specifications

The KMB3D5N40SA features a drain-source voltage (VDS) of 400V, a gate-source voltage (VGS) of ±30V, and a continuous drain current (ID) of 3.5A. The on-resistance (RDS(on)) is optimized to minimize power dissipation. The device is available in a surface-mount package, facilitating automated assembly. Its fast switching speed and low gate charge contribute to its effectiveness in high-frequency switching circuits. This MOSFET is also designed to meet RoHS compliance standards.

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