The KRC402E-RTKH is a silicon NPN epitaxial planar transistor manufactured by KEC (Korea Electronics Co., Ltd.). It is designed for amplifier and switching applications, particularly in situations where low noise and high gain are required. These transistors are commonly used in audio amplifiers, communication equipment, and other sensitive electronic circuits.

Applications:

• Low-noise amplifier circuits
• High-gain amplifier stages
• Oscillator circuits
• Mixer circuits in radio frequency (RF) applications
• General-purpose amplification and switching

Features:

• Low noise figure
• High current gain (hFE)
• High transition frequency
• NPN polarity
• Epitaxial planar construction

Benefits:

• Minimizes unwanted noise in sensitive circuits
• Provides significant amplification of weak signals
• Enables high-frequency operation
• Easy integration into various circuit designs
• Ensures reliable performance in different operating conditions

Additional Details:

The KRC402E-RTKH is typically supplied in a small signal package. Key electrical characteristics include collector-emitter voltage (VCEO), collector current (IC), and power dissipation ratings tailored for low-noise amplification. The datasheet provides detailed specifications such as noise figure (NF), gain-bandwidth product (fT), and collector-base capacitance (Cob), which are essential for circuit design and optimization. Its combination of low noise, high gain, and reliable performance makes it suitable for sensitive signal processing applications.