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KTC3875-Y-RTK/P

Part No KTC3875-Y-RTK/P
Manufacturer KEC
Catalog OEM Parts (J - L)
Sample
Rohs State Need to verify
ECAD Module
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Win Source Part Number 981914-KTC3875-Y-RTK/P
Categories OEM Parts(J-L)
Manufacturer KEC
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian KTC3875-Y-RTK/P CAD Model

Description

The KTC3875-Y-RTK/P is a silicon NPN epitaxial planar transistor manufactured by KEC. This transistor is designed for high-frequency amplification and switching applications. It is commonly used in various communication devices and high-speed circuits requiring excellent gain and low noise characteristics.

Applications

  • RF Amplifiers: Used in radio frequency amplifier circuits.
  • Oscillators: Suitable for oscillator circuits in communication equipment.
  • High-Speed Switching: Employed in high-speed switching applications.
  • Mixers: Integrated in mixer circuits for frequency conversion.
  • Communication Devices: Found in various communication devices such as wireless transceivers.

Features

  • High Transition Frequency (fT): Provides excellent high-frequency performance.
  • Low Noise Figure: Ensures low noise amplification, critical for sensitive receiver circuits.
  • High Current Gain (hFE): Delivers good amplification characteristics.
  • Epitaxial Planar Structure: Offers enhanced reliability and performance.
  • NPN Polarity: Suitable for common-emitter and common-collector configurations.

Benefits

  • Excellent High-Frequency Performance: Ideal for RF and high-speed applications.
  • Low Noise Amplification: Minimizes noise in amplification circuits.
  • Reliable Operation: The epitaxial planar structure ensures stable performance.
  • Versatile Use: Can be used in various communication and high-speed applications.
  • Efficient Performance: Designed for optimal performance in demanding circuits.

Additional Details

The KTC3875-Y-RTK/P typically comes in a small signal package, such as SOT-23. Key specifications include a collector-emitter voltage (VCEO), which must be considered for safe operation, and a collector current (IC) appropriate for its intended high-frequency use. The transition frequency (fT) is a critical parameter, indicating the transistor's ability to amplify high-frequency signals effectively. The noise figure is particularly important for low-noise amplifier designs. Adherence to the manufacturer's datasheet is crucial for proper application and to ensure optimal performance. It is RoHS compliant, adhering to environmental standards.

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Pricing & Ordering

Quantity Unit Price Ext. Price
3,110+ $0.0161 $50.0710
7,520+ $0.0133 $100.0160
11,720+ $0.0128 $150.0160
16,130+ $0.0124 $200.0120
20,835+ $0.0120 $250.0200
27,780+ $0.0108 $300.0240
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,220 pieces
MOQ: 3110 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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