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Same model may have multiple batches, images only for reference.
MRF10350 Real Image
Same model may have multiple batches, images only for reference.

MRF10350

Part No MRF10350
Manufacturer M/A-Com Technology Solutions
Catalog RF Transistors (BJT)
Description RF TRANS NPN 65V 355E-01 / RF Transistor NPN 65V 31A 350W Chassis Mount 355E-01, Style 1
Datasheet
MRF10350 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer MACOM Technology Solutions
Packaging Tray
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 65V
Gain 9dB
Power - Max 350W
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A, 5V
Current - Collector (Ic) (Max) 31A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package 355E-01
Supplier Device Package 355E-01, Style 1
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0075
Other Part Number 1465-1141
Standard Package 20
Win Source Part Number 1325009-MRF10350
Ultra Librarian 3D Model Ultra Librarian MRF10350 CAD Model

Description

The MRF10350 is a bipolar NPN transistor designed for use in discrete semiconductor products.

  • Maximum Power: 350W
  • Voltage Collector Emitter Breakdown: 65V
  • Current Collector: 31A
  • Gain: 9dB
  • Minimum DC Current Gain: 20 @ 5A, 5V
  • Supplier Device Package: 355E-01, Style 1
  • Mounting Type: Chassis Mounting
  • Temperature Range: 200°C
  • RoHS3 Compliant: Yes

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