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Same model may have multiple batches, images only for reference.
PH1214-110M M/A-Com Technology Solutions
Same model may have multiple batches, images only for reference.

PH1214-110M

Part No PH1214-110M
Manufacturer M/A-Com Technology Solutions
Catalog RF Transistors (BJT)
Description TRANSISTOR,110W,1.20-1.40GHZ,40V
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Bipolar RF Transistors
Mfr M/A-Com Technology Solutions
Package Bulk
Product Status Active
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 70V
Gain 7.4dB
Power - Max 350W
Current - Collector (Ic) (Max) 10.5A
Temperature Range - Operating 200°C (TJ)
Mounting Type Chassis Mount
Package / Case 2L-FLG
Supplier Device Package 2L-FLG
Base Product Number PH1214
Standard Package 1 pcs
Win Source Part Number 273684-PH1214-110M
Ultra Librarian 3D Model Ultra Librarian PH1214-110M CAD Model

Description

The PH1214-110M is a bipolar RF transistor designed for high-power applications.

  • Maximum Power Rating: 350W
  • Maximum Collector Current: 10.5A
  • Type: NPN
  • Gain: 7.4dB
  • Package: Bulk
  • Standard Package: 1 piece
  • Voltage Breakdown: 70V
  • Operating Temperature: Up to 200 degrees Celsius
  • Status: Active
  • Manufacturer: M/A-Com Technology Solutions

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $337.2762 $337.2762
2+ $302.3859 $604.7718
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Availability: 31 pieces
Order Increment : 1 pcs
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