The MDFS4N60D is a high-voltage MOSFET manufactured by MagnaChip Semiconductor. It is an N-channel enhancement mode MOSFET designed for high-efficiency power switching applications. The device features low on-resistance and fast switching speed, which contributes to improved efficiency and reduced power losses.

Applications:

• Switching Mode Power Supplies (SMPS)
• Power Factor Correction (PFC)
• DC-DC Converters
• Lighting Ballasts
• Motor Drives

Features:

• High Voltage Capability: 600V drain-source voltage rating.
• Low On-Resistance: Reduces conduction losses.
• Fast Switching Speed: Minimizes switching losses.
• Avalanche Ruggedness: Provides enhanced reliability.
• High dv/dt Capability: Ensures stable operation in high-frequency circuits.
• Isolated Package: Provides electrical isolation for safety.

Benefits:

• Improved Efficiency: Low on-resistance and fast switching speed result in reduced power losses and higher efficiency.
• Enhanced Reliability: Avalanche ruggedness protects against voltage transients.
• Simplified Design: Optimized characteristics allow for simpler circuit designs.
• Reduced Heat Dissipation: Lower losses result in less heat generation.
• Increased Safety: Isolated package provides electrical isolation for safety in high-voltage applications.

Technical Specifications:

The MDFS4N60D features a drain-source voltage (Vds) of 600V, a gate-source voltage (Vgs) of ±30V, and a continuous drain current (Id) of 4A. The on-resistance (Rds(on)) is low. The device is typically available in an isolated TO-220 package. The operating junction temperature ranges from -55°C to +150°C.