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2SA1980-Y-AP

Part No 2SA1980-Y-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Description TRANS PNP 50V 0.15A TO92 / Bipolar (BJT) Transistor PNP 50 V 150 mA 80MHz 625 mW Through Hole TO-92
Datasheet
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type PNP
Current - Collector (Ic) (Max) 150 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2A, 6V
Power - Max 625 mW
Frequency - Transition 80MHz
Temperature Range - Operating 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Standard Package 1,000
Win Source Part Number 1036630-2SA1980-Y-AP
Ultra Librarian 3D Model Ultra Librarian 2SA1980-Y-AP CAD Model

Description

The Micro Commercial Co 2SA1980-Y-AP is a PNP bipolar transistor designed for discrete semiconductor products.

  • Maximum Power: 625 mW
  • Collector-Emitter Breakdown Voltage: 50 V
  • Maximum Collector Current: 150 mA
  • Vce Saturation: 300mV @ 10mA, 100mA
  • DC Current Gain: 120 @ 2A, 6V
  • Frequency Transition: 80MHz
  • Package: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Temperature Range: 150°C (TJ)
  • Status: Obsolete

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