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Same model may have multiple batches, images only for reference.
S8050-D-AP Real Image
Same model may have multiple batches, images only for reference.

S8050-D-AP

Part No S8050-D-AP
Manufacturer Micro Commercial Co
Catalog Transistors (BJT) - Single
Datasheet
S8050-D-AP Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Micro Commercial Co
Package Tape & Box (TB)
Product Status Obsolete
Transistor Type NPN
Current - Collector (Ic) (Max) 500 mA
Voltage - Collector Emitter Breakdown (Max) 25 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 50mA, 1V
Power - Max 625 mW
Frequency - Transition 150MHz
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
Other Names 353-S8050-D-APTB
Standard Package 2,000
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0075
Win Source Part Number 1278661-S8050-D-AP
Ultra Librarian 3D Model Ultra Librarian S8050-D-AP CAD Model

Description

The S8050-D-AP is an NPN transistor with a maximum power rating of 625mW.

  • Manufacturer: Micro Commercial Co.
  • Maximum Power Rating: 625mW
  • Maximum Collector-Emitter Breakdown Voltage: 25V
  • Maximum Collector Current: 500mA
  • DC Current Gain (hFE): 160 @ 50mA, 1V
  • Frequency Transition: 150MHz
  • Vce Saturation: 600mV @ 50mA, 500mA
  • Collector Cutoff Current: 100nA
  • Package: TO-226-3, TO-92-3 (TO-226AA) formed leads
  • Mounting: Through Hole
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • MSL Level: 1 (unlimited)
  • HTSUS Code: 8541.21.0075
  • Status: Obsolete

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