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S9013-G-AP

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Part No	S9013-G-AP
Manufacturer	Micro Commercial Co
Catalog	RF Transistors (BJT)
Description	TRANS NPN 25V 0.5A TO92 / Bipolar (BJT) Transistor NPN 25 V 500 mA 150MHz 625 mW Through Hole TO-92
Datasheet	S9013-G-AP Datasheet
Sample
Rohs State
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr	Micro Commercial Co
Package	Tape & Box (TB)
Product Status	Obsolete
Transistor Type	NPN
Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	25 V
Vce Saturation (Max) @ Ib, Ic	600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	112 @ 50mA, 1V
Power - Max	625 mW
Frequency - Transition	150MHz
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package	TO-92
MSL Level	1 (Unlimited)
ECCN	EAR99
HTSUS	8541.21.0075
Other Names	353-S9013-G-APTB
Standard Package	2,000
Win Source Part Number	1090624-S9013-G-AP
Ultra Librarian 3D Model	Ultra Librarian S9013-G-AP CAD Model

Alternative Products

Description

The Micro Commercial Co S9013-G-AP is a bipolar junction transistor (BJT) designed for single transistor applications.

Maximum Power: 625mW
Voltage - Collector Emitter Breakdown (Max): 25V
Maximum Collector Current (Ic): 500mA
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Maximum Collector Cutoff: 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 112 @ 50mA, 1V
Frequency Transition: 150MHz
Mounting Type: Through Hole
Package: TO-226-3, TO-92-3 (TO-226AA) formed leads

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