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2N5935

Part No 2N5935
Manufacturer Microchip Technology
Catalog Transistors (BJT) - Single
Description POWER BJT
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Mfr Microchip Technology
Series -
Package Bulk
Product Status Active
Transistor Type NPN
Current - Collector (Ic) (Max) 30 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic -
Current - Collector Cutoff (Max) -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Power - Max 175 W
Frequency - Transition -
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Supplier Device Package TO-204AD (TO-3)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1377232-2N5935
Ultra Librarian 3D Model Ultra Librarian 2N5935 CAD Model

Description

Microchip Technology's 2N5935 Power Transistor

Introducing the robust and reliable 2N5935 power transistor from the renowned manufacturer, Microchip Technology. This high-performance component is engineered to cater to a broad range of applications, offering both versatility and durability for professionals in the electronics industry.

Key Features:

  • High Power Handling: The 2N5935 is capable of managing significant power levels, making it an ideal choice for power amplification and switching applications.
  • Excellent Gain Characteristics: With its superior gain properties, this transistor ensures efficient signal amplification, translating to improved overall performance of your electronic circuits.
  • Wide Operating Temperature Range: Engineered to withstand extreme conditions, the 2N5935 operates effectively across a broad temperature spectrum, ensuring reliability in various environments.
  • Robust Construction: Microchip Technology has built the 2N5935 with longevity in mind, using high-quality materials that contribute to its sturdy structure and long operational life.

Applications:

The versatility of the 2N5935 makes it suitable for an array of applications, including:

  • Power regulators and converters
  • Audio amplifiers
  • Motor control circuits
  • Switching power supplies
  • Industrial and commercial electronic systems

Technical Specifications:

The 2N5935 boasts an impressive set of technical specifications that ensure its performance meets the demands of modern electronic systems:

  • Collector-Emitter Voltage (Vceo): Specified for reliable operation at various voltages.
  • Collector Current (Ic): Capable of handling significant current without degradation.
  • Power Dissipation (Pd): Designed to dissipate heat efficiently, maintaining stability and extending the lifespan of the device.
  • HFE (DC Current Gain): Exhibits a high current gain bandwidth product, facilitating its use in high-frequency applications.

Whether you're designing a new system or upgrading an existing one, the Microchip Technology's 2N5935 power transistor is a component you can trust for exceptional performance and reliability. Its combination of power handling, efficiency, and durability makes it a go-to choice for engineers and designers seeking quality and longevity in their electronic components.

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