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APT10M11LVRG

Part No APT10M11LVRG
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO264
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Microchip Technology
Series POWER MOS V®
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs 450 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 10300 pF @ 25 V
Power Dissipation (Max) 520W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-264 (L)
Package / Case TO-264-3, TO-264AA
Base Product Number APT10M11
Standard Package 1 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 57708-APT10M11LVRG
Ultra Librarian 3D Model Ultra Librarian APT10M11LVRG CAD Model

Description

Product Overview: APT10M11LVRG by Microchip Technology

The APT10M11LVRG is a state-of-the-art power MOSFET brought to you by Microchip Technology, a leader in the semiconductor industry. This high-performance component is designed to cater to a wide array of applications, ranging from power supply systems to motor drives, ensuring efficient power management and reliability in high-demand environments.

Engineered with advanced silicon technology, the APT10M11LVRG boasts impressive features that make it a top choice for engineers and designers. With a drain-to-source voltage (VDS) of 1000V, it can handle high voltage applications with ease. The device also exhibits a low on-resistance (RDS(on)), which translates to reduced conduction losses and improved overall efficiency.

The APT10M11LVRG is also characterized by its fast switching capabilities, thanks to its low input and Miller capacitance. This enhances the performance in high-frequency operations and contributes to a reduction in switching losses. Additionally, the device's robust body diode can endure hard commutation conditions, making it highly suitable for applications that require a rugged power component.

This MOSFET is encapsulated in a RoHS-compliant TO-247 package, which not only provides excellent thermal management but also ensures compatibility with a broad range of PCB layouts. Its lead-free construction is in line with environmental standards, making it an eco-friendly choice for green technology solutions.

Microchip Technology's commitment to quality is evident in the APT10M11LVRG's design, which includes features like avalanche energy rating and maximum junction temperature capabilities, guaranteeing long-term reliability and performance under extreme conditions.

In summary, the APT10M11LVRG from Microchip Technology is an exceptional power MOSFET that combines high voltage capacity, low resistance, fast switching, and durable construction. It is an ideal choice for designers who demand the highest levels of efficiency and reliability in their power management systems.

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