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JAN2N2326A

Part No JAN2N2326A
Manufacturer Microchip Technology
Catalog SCRs - Single
Description SCR 200V TO5  /  SCR 200 V Sensitive Gate Through Hole TO-5
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Thyristors - SCRs
Mfr Microchip Technology
Series Military, MIL-PRF-19500/276
Package Bulk
Product Status Obsolete
Voltage - Off State 200 V
Voltage - Gate Trigger (Vgt) (Max) 600 mV
Current - Gate Trigger (Igt) (Max) 20 µA
Current - On State (It (AV)) (Max) 220 mA
Current - Hold (Ih) (Max) 2 mA
SCR Type Sensitive Gate
Temperature Range - Operating -65°C ~ 125°C
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Supplier Device Package TO-5
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.30.0080
Other Names 1086-20703,1086-20703-MIL
Standard Package 100
Win Source Part Number 1031117-JAN2N2326A
Ultra Librarian 3D Model Ultra Librarian JAN2N2326A CAD Model

Description

Microchip Technology JAN2N2326A NPN Transistor

The JAN2N2326A is a high-quality NPN bipolar junction transistor (BJT) designed and manufactured by Microchip Technology, a leading provider of smart, connected, and secure embedded control solutions. This transistor is part of Microchip's extensive range of semiconductor products that cater to a wide array of applications, including aerospace, military, and high-reliability industries.

This particular model, JAN2N2326A, is designed to meet stringent requirements, ensuring reliability and performance under extreme conditions. It is characterized by its robustness and ability to handle high power levels, making it an ideal choice for applications that require switching and amplification of electronic signals.

Key Features of the JAN2N2326A:

  • Quality Level: The JAN2N2326A is built to meet the Joint Army/Navy (JAN) level specifications, indicating its suitability for military-grade applications.
  • High Power Handling: This NPN transistor is capable of handling high power, making it suitable for demanding environments where power efficiency is crucial.
  • High Frequency Performance: With excellent high-frequency characteristics, the JAN2N2326A is well-suited for applications in RF amplification and fast-switching circuits.
  • Durable Construction: The device is constructed with high-quality materials to ensure it can withstand harsh conditions and provide a long operational life.
  • Versatility: The JAN2N2326A can be used in a variety of circuit configurations, including amplifiers, oscillators, and switching applications, offering designers flexibility in their designs.

Whether it's for use in communication equipment, avionics, or other high-reliability electronic systems, the JAN2N2326A brings the performance and dependability expected from a Microchip Technology product. Its military-grade design ensures that it will perform reliably even in the most challenging situations, making it an excellent choice for engineers and designers looking for a robust semiconductor solution.

For detailed specifications, application notes, and additional resources, it is recommended to consult the official datasheet provided by Microchip Technology. This will ensure proper usage and integration of the JAN2N2326A into your electronic designs.

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