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JANS2N3700UB

Part No JANS2N3700UB
Manufacturer Microchip Technology
Catalog RF Transistors (BJT)
Description TRANS NPN 80V 1A UB / Bipolar (BJT) Transistor NPN 80 V 1 A 500 mW Surface Mount UB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Mfr Microchip Technology
Series Military, MIL-PRF-19500/391
Package Bulk
Transistor Type NPN
Current - Collector (Ic) (Max) 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 500mA, 10V
Power - Max 500 mW
Temperature Range - Operating -65°C ~ 200°C (TJ)
Mounting SMD (SMT)
Package / Case 4-SMD, No Lead
Supplier Device Package UB
Base Product Number 2N3700
RoHS Status RoHS non-compliant
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.21.0095
Other Names 2266-JANS2N3700UB
Standard Package 1
Win Source Part Number 1215477-JANS2N3700UB
Ultra Librarian 3D Model Ultra Librarian JANS2N3700UB CAD Model

Description

Product Overview: JANS2N3700UB by Microchip Technology

The JANS2N3700UB is a high-quality N-Channel Field-Effect Transistor (FET) produced by Microchip Technology, a leader in the semiconductor industry. This product is specifically designed to meet the stringent requirements of aerospace applications, providing reliable performance in extreme environmental conditions.

Key Features

  • High Reliability: As part of Microchip's space-level product line, the JANS2N3700UB is manufactured to meet or exceed the rigorous standards of the Joint Army/Navy (JAN) specification, ensuring top-tier reliability and performance.
  • High-Temperature Operation: The device is capable of operating at high temperatures, making it suitable for use in harsh environments where thermal resilience is critical.
  • Radiation Hardened: It is designed to withstand the effects of radiation, a necessary feature for space and military applications where exposure to radiation is a significant concern.
  • Robust Electrical Characteristics: The JANS2N3700UB boasts excellent electrical properties, including a high drain-source breakdown voltage, low gate threshold voltage, and low leakage current, delivering efficient performance for a wide range of applications.

Applications

The JANS2N3700UB is ideal for a variety of high-demand applications, including:

  • Space systems and satellites
  • Military and defense electronics
  • Avionics and aerospace instrumentation
  • High-reliability industrial applications

Quality and Certification

Microchip Technology is committed to delivering products that adhere to the highest standards of quality and reliability. The JANS2N3700UB is no exception, with certification and quality control processes that ensure it meets the exacting requirements of space-level components. Customers can trust in the robustness and longevity of this FET when deployed in mission-critical systems.

Technical Support and Availability

Microchip Technology provides comprehensive technical support for the JANS2N3700UB, including detailed datasheets, application notes, and customer service from experienced engineers. The product is available for order with flexible quantity options to accommodate projects of different scales, from prototype development to large-scale production.

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Pricing & Ordering

Quantity Unit Price Ext. Price
1+ $59.1164 $59.1164
3+ $48.5058 $145.5174
4+ $46.9899 $187.9596
6+ $45.4741 $272.8446
7+ $43.9583 $307.7081
9+ $39.4109 $354.6981
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 284 pieces
Order Increment : 1 pcs
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Shipping Information

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