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VN10KN3-G-P002

Part No VN10KN3-G-P002
Manufacturer Microchip Technology
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 310MA TO92-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Microchip Technology
Series -
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Tj)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-92-3
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Base Product Number VN10KN3
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1380265-VN10KN3-G-P002
Ultra Librarian 3D Model Ultra Librarian VN10KN3-G-P002 CAD Model

Description

The VN10KN3-G-P002 is a high-performance N-Channel Enhancement Mode Field Effect Transistor (MOSFET) from the renowned manufacturer, Microchip Technology. This electronic component is designed to meet the rigorous demands of modern circuit designs, offering a compact, efficient, and reliable solution for switching and amplification applications.

Key Features

  • Low On-Resistance: The VN10KN3-G-P002 boasts a low on-resistance, which translates to reduced power loss and improved efficiency in operation. This feature is particularly beneficial in applications where power conservation is critical.
  • High-Speed Switching: Engineered for high-speed switching, this MOSFET can handle fast transitions, making it ideal for high-frequency applications such as power supplies and converters.
  • Thermal Performance: With its excellent thermal characteristics, the VN10KN3-G-P002 can operate reliably over a wide temperature range, ensuring consistent performance even under thermal stress.
  • Gate Protection: The device includes integrated protection features such as a gate-source Zener diode, which safeguards the gate from over-voltage, enhancing the MOSFET's longevity and reliability.

Applications

The versatility of the VN10KN3-G-P002 allows it to be used across a broad spectrum of applications. It is particularly well-suited for:

  • Power Management Circuits
  • DC/DC Converters
  • Motor Controllers
  • Automotive Applications
  • Switch Mode Power Supplies (SMPS)

Product Specifications

The VN10KN3-G-P002 features a drain-source voltage (Vds) of 100V, gate-source voltage (Vgs) of ±20V, and a continuous drain current (Id) at 25°C of 170mA. Its low threshold voltage ensures that it can be driven by low-voltage logic signals, making it compatible with a wide range of control circuits.

Quality and Reliability

Microchip Technology is known for its commitment to quality, and the VN10KN3-G-P002 is no exception. Each device is rigorously tested to meet the high standards expected from Microchip products, ensuring that customers receive components that perform reliably over the long term.

Whether you are designing power-efficient consumer electronics or robust industrial systems, the VN10KN3-G-P002 from Microchip Technology is a strong candidate for your MOSFET needs.

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