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TSM4NC50CP

Name: TSM4NC50CP
Brand: Taiwan Semiconductor
SKU: 1383752
Availability: InStock
Rating: 4.91 (5 reviews)

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Part No	TSM4NC50CP
Manufacturer	Taiwan Semiconductor
Catalog	Transistors - FETs, MOSFETs - RF
Description	500V, 4A, SINGLE N-CHANNEL POWER / N-Channel 500 V 4A (Tc) 83W (Tc) Surface Mount TO-252, (D-Pak)
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Category	Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Mfr	Taiwan Semiconductor
Series	-
Package	Tape & Reel (TR)
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.7Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	453 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	83W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	TSM4
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	5,000 pcs
Win Source Part Number	1383752-TSM4NC50CP
Ultra Librarian 3D Model	Ultra Librarian TSM4NC50CP CAD Model

Alternative Products

Description

The TSM4NC50CP is an N-channel MOSFET transistor suitable for various applications, manufactured by Taiwan Semiconductor.

Drain to Source Voltage (Vdss): 500V
Continuous Drain Current (Id): 4A @ 25°C
On-Resistance (Rds On): 2.7Ohm @ 1.7A, 10V
Gate Threshold Voltage (Vgs(th)): 3V @ 250μA
Power Dissipation: 83W @ Tc
Mounting Type: Surface Mountable
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg): 12nC @ 10V
Input Capacitance (Ciss): 453pF @ 50V

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