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MT29F1G08ABBEAMD-IT:E

Part No MT29F1G08ABBEAMD-IT:E
Manufacturer Micron Technology Inc.
Catalog Memory
Sample
Rohs State rohs
ECAD Module
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Reference Date Code 12+
Reference case BGA
Manufacturer Micron Technology Inc.
Manufacturer Homepage www.micron.com
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 747786-MT29F1G08ABBEAMD-IT:E
Ultra Librarian 3D Model Ultra Librarian MT29F1G08ABBEAMD-IT:E CAD Model

Description

The MT29F1G08ABBEAMD-IT:E is a NAND flash memory device manufactured by Micron Technology. It is a 1Gb (Gigabit) memory chip organized as 128M x 8 bits. This type of memory is commonly used for data storage in various electronic devices due to its non-volatile nature, meaning it retains data even when power is removed.

Applications:

  • Solid-State Drives (SSDs): Used as storage medium in low-capacity SSDs or as cache memory.
  • USB Flash Drives: Provides the storage capacity for portable data storage.
  • Memory Cards: Found in SD cards, microSD cards, and other removable storage formats.
  • Embedded Systems: Stores firmware, configuration data, and user data in embedded applications.
  • Digital Cameras: Stores captured images and videos.

Features:

  • 1Gb (Gigabit) Capacity: Provides ample storage for various data types.
  • NAND Flash Technology: Non-volatile storage, retaining data without power.
  • 8-bit Data Bus: Allows for efficient data transfer.
  • Page Size: Typically 2KB + 64B spare area per page.
  • Block Size: Typically 128KB per block.
  • Operating Voltage: Typically 3.3V.

Benefits:

  • Non-Volatile Storage: Data is retained even when power is off.
  • High Density: Provides a large storage capacity in a small package.
  • Fast Read/Write Speeds: Enables quick data access and storage.
  • Low Power Consumption: Suitable for battery-powered devices.
  • Reliable Data Storage: Designed for long-term data retention.

Additional Details:

The MT29F1G08ABBEAMD-IT:E is typically packaged in a TSOP (Thin Small Outline Package). The “IT:E” suffix denotes specific temperature range and packaging options. It supports various operations such as program (write), erase, and read. The endurance of NAND flash memory is measured in program/erase cycles, indicating the number of times a block can be written to and erased before it starts to degrade. Error correction code (ECC) is usually implemented to correct errors that may occur during data storage and retrieval. This specific part is designed for applications needing reliable, non-volatile data storage in a relatively compact form factor.

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