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MT29F8G08ADAFAH4-AAT:F TR

Part No MT29F8G08ADAFAH4-AAT:F TR
Manufacturer Micron Technology Inc.
Catalog Flash
Description IC FLASH 8GBIT PARALLEL 63VFBGA / FLASH - NAND (SLC) Memory IC 8Gb (1G x 8) Parallel 63-VFBGA (9x11)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory
Mfr Micron Technology Inc.
Series Automotive, AEC-Q100
Package Tape & Reel (TR)
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 8Gb (1G x 8)
Memory Interface Parallel
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 105°C (TA)
Mounting SMD (SMT)
Package / Case 63-VFBGA
Supplier Device Package 63-VFBGA (9x11)
Base Product Number MT29F8G08
MSL Level 3 (168 Hours)
HTSUS 8542.32.0071
Standard Package 2,000
Win Source Part Number 1024814-MT29F8G08ADAFAH4-AAT:F TR
Ultra Librarian 3D Model Ultra Librarian MT29F8G08ADAFAH4-AAT:F TR CAD Model

Description

The MT29F8G08ADAFAH4-AAT:F TR is an 8Gb NAND Flash memory device manufactured by Micron Technology. It is a high-density, non-volatile memory solution suitable for a wide range of data storage applications.

Applications:

  • Solid-state drives (SSDs)
  • Embedded storage
  • Mobile devices (smartphones, tablets)
  • Digital cameras
  • USB flash drives
  • Memory cards

Features:

  • Density: 8Gb (1GB)
  • Interface: ONFI 2.3
  • Operating Voltage: 3.3V
  • Operating Temperature: -25°C to +85°C
  • Page Size: 8KB + 224B spare
  • Block Size: 512KB
  • Data Transfer Rate: Up to 133 MT/s
  • Package: TSOP48

Benefits:

  • High Capacity: Provides ample storage space for data-intensive applications.
  • Fast Data Transfer: High data transfer rates enable quick read and write operations.
  • Non-Volatile Storage: Retains data even when power is removed.
  • Compact Form Factor: Allows for integration into small devices.
  • Low Power Consumption: Minimizes energy usage in battery-powered applications.

Additional Details:

The MT29F8G08ADAFAH4-AAT:F TR features advanced error correction code (ECC) to ensure data integrity. It supports wear leveling algorithms to extend the lifespan of the memory. The device's low power consumption makes it ideal for mobile and embedded applications.

The NAND flash memory is organized into pages and blocks. Data is programmed and erased in pages, while blocks are erased collectively. Wear leveling algorithms distribute write operations across the memory array to prevent premature wear of any particular block. Error correction codes detect and correct errors that may occur during data storage and retrieval.

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