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MT46V8M16P-5B:D

Part No MT46V8M16P-5B:D
Manufacturer Micron Technology Inc.
Catalog Memory
Sample
Rohs State Need to verify
ECAD Module
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Reference Date Code 0520+
Reference case TSSOP-6
Manufacturer Micron Technology Inc.
Manufacturer Homepage www.micron.com
RoHS State Request Verification
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 715535-MT46V8M16P-5B:D
Ultra Librarian 3D Model Ultra Librarian MT46V8M16P-5B:D CAD Model

Description

The MT46V8M16P-5B:D is a high-performance, double data rate (DDR) synchronous dynamic random-access memory (SDRAM) component manufactured by Micron Technology Inc. It is designed for high-bandwidth memory applications requiring fast data transfer rates and low latency. This DDR SDRAM is commonly used in graphics cards, high-performance computing systems, and embedded applications that demand significant memory bandwidth. The component is organized as 8 Meg x 16, offering a total memory capacity of 128Mb.

Applications:

  • Graphics Cards: Provides high-speed memory for storing textures, frame buffers, and other graphical data.
  • High-Performance Computing: Used in servers, workstations, and other systems requiring fast memory access for demanding applications.
  • Embedded Systems: Implemented in networking equipment, industrial controllers, and automotive systems where high memory bandwidth is crucial.
  • Gaming Consoles: Supports high-resolution graphics and fast data loading for immersive gaming experiences.
  • Video Processing: Facilitates real-time video encoding, decoding, and editing with its high data transfer capabilities.

Features:

  • Double Data Rate (DDR) Architecture: Transfers data on both rising and falling edges of the clock signal, effectively doubling the bandwidth compared to single data rate SDRAM.
  • High Clock Frequency: Operates at a high clock frequency to enable fast data transfer rates.
  • Low Latency: Offers low access latency for quick data retrieval and processing.
  • Differential Clock Inputs: Provides improved noise immunity and signal integrity.
  • Programmable Burst Length: Supports various burst lengths for flexible data access patterns.
  • Auto Refresh Mode: Automatically refreshes the memory cells to retain data integrity.
  • Power-Down Mode: Reduces power consumption during idle periods.

Benefits:

  • Increased Memory Bandwidth: DDR architecture significantly improves memory bandwidth compared to traditional SDRAM.
  • Faster Data Transfer Rates: High clock frequency enables rapid data transfer for demanding applications.
  • Improved System Performance: Low latency and high bandwidth contribute to overall system performance enhancement.
  • Enhanced Graphics Capabilities: Supports high-resolution textures and complex graphical operations.
  • Reduced Power Consumption: Power-down mode helps conserve energy in low-activity periods.

Additional Details:

The MT46V8M16P-5B:D operates at a voltage of 2.5V. The -5B designation indicates a specific speed grade within the MT46V8M16P series. It supports various operating modes, including burst read and write operations. The component incorporates features such as DLL (Delay Locked Loop) to ensure accurate clock synchronization and data alignment. It is available in a standard TSOP (Thin Small Outline Package), which is a common package type for memory devices. The operating temperature range typically spans from 0°C to +70°C, making it suitable for a wide range of applications. Proper PCB layout and termination techniques are essential to maintain signal integrity and achieve optimal performance with this high-speed memory component.

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