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1N5803

Part No 1N5803
Manufacturer Microsemi Corporation
Catalog Diodes, Rectifiers - Single
Description MILITARY APPROVED HIGH EFFICIENCY 2.5 AMP AND 6.0 AMP | DIODE GEN PURP 75V 1A AXIAL
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete
Diode Type Standard
Voltage - DC Reverse (Vr) (Maximum) 75V
Current - Average Rectified (Io) 1A
Voltage - Forward (Vf) (Maximum) at If 875mV at 1A
Speed Fast Recovery = 200mA (Io)
Reverse Recovery Time (trr) 25ns
Current - Reverse Leakage at Vr 1μA at 75V
Capacitance at Vr, F 25pF at 10V, 1MHz
Mounting Style Through Hole
Manufacturer Package A, Axial
Operating Temperature - Junction -65°C ~ 175°C
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1122013-1N5803
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 1N5803 CAD Model

Description

The Microsemi Corporation 1N5803 is a fast recovery diode that is designed for use in discrete semiconductor products.

  • Current Rating: 1A
  • Reverse Recovery Time: 25ns
  • Package: A, Axial
  • Mounting: Through Hole
  • Maximum DC Reverse Voltage: 75V
  • Maximum Forward Voltage: 875mV @ 1A
  • Current Leakage: 1μA @ 75V
  • Capacitance: 25pF @ 10V, 1MHz

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