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2N6213

Part No 2N6213
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS PNP 350V 2A TO-66
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Polarity PNP
Maximum Current Collector 2A
VCEO Maximum Collector-Emitter Breakdown Voltage 350V
Max Vce (sat) 2V @ 125mA, 1A
Collector Cut-off Current(Max) 5mA
Typical Gain (hFE) (Min) 30 @ 1A, 5V
Maximum Power Dissipation 3W
Temperature Range - Operating -55°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-66 (TO-213AA)
Win Source Part Number 197471-2N6213
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian 2N6213 CAD Model

Description

2N6213 Description

The 2N6213 is a silicon-based NPN power transistor developed for general-purpose low-medium power applications. Its high breakdown voltage and impressive current handling make it ideal for amplifier configurations.

Features and Benefits

  • High Breakdown Voltage: Ideal for demanding load conditions.
  • Efficient Thermal Management: Reduces risks of overheating.
  • Enhanced Durability: Provides dependable long-term use.

Applications and Projects

  • Power Amplifiers
  • Voltage Regulation Circuits
  • Automotive Electronics
  • Industrial Controls

Additional Details

Leveraging the 2N6213 offers significant design flexibility due to its reliable performance across various power domains, making it a choice component in automotive and heavy-duty electronics.

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