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Same model may have multiple batches, images only for reference.
SPW11N60C3 Real Image
Same model may have multiple batches, images only for reference.

SPW11N60C3

Part No SPW11N60C3
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-247 Tube / MOSFET N-CH 650V 11A TO-247
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 3.9V @ 500μA
Max Gate Charge 60nC @ 10V
Max Input Capacitance 1200pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 125W (Tc)
Maximum Rds On at Id,Vgs 380 mOhm @ 7A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Dimension TO-247-3
Win Source Part Number 089349-SPW11N60C3
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Sufficient
Family Name SPW11N60C3
Introduction Date July 25, 2002
ECCN EAR99
Halogen Free Compliant
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian SPW11N60C3 CAD Model

Description

The Infineon Technologies 089349-SPW11N60C3 MOSFET is an N-channel power MOSFET with a drain-source breakdown voltage of 650V and a maximum continuous drain current of 11A @ 25°C.

  • Power Dissipation: 125W
  • Input Capacitance: 1200pF @ 25V
  • Package: PG-TO247-3
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0095 $60.5700
140+ $0.8281 $115.9340
220+ $0.8027 $176.5940
300+ $0.7762 $232.8600
385+ $0.7508 $289.0580
515+ $0.6734 $346.8010
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Availability: 7,240 pieces
MOQ: 60 pcs
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