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SI1035X-T1-GE3

Part No SI1035X-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N/P-CH 20V SC-89
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain-Source Breakdown Voltage 20V
Continuous Drain Current at 25°C 180mA, 145mA
Maximum Rds On at Id,Vgs 5 Ohm @ 200mA, 4.5V
Gate-Source Threshold Voltage 400mV @ 250μA (Min)
Max Gate Charge 0.75nC @ 4.5V
Maximum Power Dissipation 250mW
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-89-6
Win Source Part Number 104570-SI1035X-T1-GE3
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SI1035X-T1-GE3 CAD Model

Description

This electronic component is an N and P-channel FET type manufactured by Vishay.

  • Manufacturer: Vishay
  • Type: N and P-channel FET
  • Feature: logic level gate
  • Category: discrete semiconductor products
  • Status: active
  • Temperature Range: -55°C to 150°C (TJ)
  • Case/Package: SC-89-6
  • Maximum Power Dissipation: 250mW
  • Drain-Source Breakdown Voltage: 20V
  • Continuous Drain Current @ 25°C: 180mA, 145mA
  • Gate-Source Threshold Voltage: 400mV @ 250μA (Min)
  • Maximum Gate Charge: 0.75nC @ 4.5V
  • Maximum Input Capacitance: No maximum input capacitance
  • Maximum Rds On @ Id,Vgs: 5 Ohm @ 200mA, 4.5V
  • Popularity: medium
  • Supply and Demand Status: balanced

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Pricing & Ordering

Quantity Unit Price Ext. Price
255+ $0.2298 $58.5990
615+ $0.1887 $116.0505
950+ $0.1827 $173.5650
1,310+ $0.1769 $231.7390
1,690+ $0.1709 $288.8210
2,265+ $0.1533 $347.2245
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,100 pieces
MOQ: 255 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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