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Same model may have multiple batches, images only for reference.
APT1002RBNG
Same model may have multiple batches, images only for reference.

APT1002RBNG

Part No APT1002RBNG
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 1KV 8A TO247AD / Trans MOSFET N-CH 1KV 7A 3-Pin(3+Tab) TO-247AD
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series POWER MOS IV
Packaging Tube
Part Status Obsolete(EOL)
Channel Type Type N
Technology MOSFET
Drain Source Voltage 1000V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs 105nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1800pF @ 25V
Vgs (Maximum) ±30V
Power Dissipation (Maximum) 240W (Tc)
Rds On (Maximum) @ Id, Vgs 1.6 Ohm @ 4A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247AD
Package TO-247-3
Win Source Part Number 768654-APT1002RBNG
Popularity Medium
Supply and Demand Status Limited
Family Name APT1002RBNG
Introduction Date March 11, 1997
ECCN EAR99
Estimated EOL Date Obsolete / End of life
Ultra Librarian 3D Model Ultra Librarian APT1002RBNG CAD Model

Description

The APT1002RBNG is a MOSFET integrated circuit from Microsemi Corporation.

  • Package: TO-247-3
  • Operating Temperature (TJ): -55°C to 150°C
  • Applications: Discrete Semiconductor Products
  • Continuous Drain Current (Tc): 8A
  • Maximum Gate Source Voltage: ±30V
  • Maximum Power Dissipation (Tc): 240W
  • Series: POWER MOS IV
  • Status: Obsolete (EOL)
  • Drive Voltage: 10V
  • Channel Type: N

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