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Same model may have multiple batches, images only for reference.
APT100GN120B2G Real Image
Same model may have multiple batches, images only for reference.

APT100GN120B2G

Part No APT100GN120B2G
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 1200V 245A 960W TMAX
Datasheet
APT100GN120B2G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 245A
Pulsed Collector Current 300A
Collector-emitter saturation voltage(Max) 2.1V @ 15V, 100A
Maximum Power Dissipation 960W
Total Switching Energy(Ets) 11mJ (on), 9.5mJ (off)
Input Type Standard
Gate Charge 540nC
Turn-on and Turn-off delay time 50ns/615ns
Testing Conditions 800V, 100A, 1 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Dimension TO-247-3 Variant
Win Source Part Number 199250-APT100GN120B2G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT100GN120B2G CAD Model

Description

APT100GN120B2G Description

The APT100GN120B2G is a versatile transistor designed for optimized thermal performance and high efficiency across various electronic applications. It offers a reliable solution for high-frequency switching tasks.

  • Voltage Rating: 1000V
  • Current Rating: 120A
  • Operating Temperature: -55°C to 150°C
  • Packaging: SOT-227

Applications

  • Renewable Energy Systems
  • Inverters
  • High-Frequency Welders
  • Induction Heating Equipment

Features and Benefits

  • Exceptional thermal performance for increased lifespan
  • High frequency switching capability
  • Low power loss to enhance overall system efficiency
  • Robust design for heavy-duty applications

Additional Details: Ideal for demanding applications, the APT100GN120B2G supports innovations in renewable energy and high-efficiency power systems.

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