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Same model may have multiple batches, images only for reference.
APT102GA60L Real Image
Same model may have multiple batches, images only for reference.

APT102GA60L

Part No APT102GA60L
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description High Speed PT IGBT
Datasheet
APT102GA60L Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
IGBT Type PT
Voltage - Collector Emitter Breakdown (Maximum) 600V
Current - Collector (Ic) (Maximum) 183A
Current - Collector Pulsed (Icm) 307A
Vce(on) (Maximum) @ Vge, Ic 2.5V @ 15V, 62A
Power - Max 780W
Switching Energy 1.354mJ (on), 1.614mJ (off)
Input Type Standard
Gate Charge 294nC
Td (on/off) @ 25°C 28ns/212ns
Test Condition 400V, 62A, 4.7 Ohm, 15V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Package TO-264-3, TO-264AA
Manufacturer Package TO-264 [L]
Win Source Part Number 1146588-APT102GA60L
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Family Name APT102GA60L
Introduction Date April 30, 2008
ECCN EAR99
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian APT102GA60L CAD Model

Description

The APT102GA60L is an electronic component manufactured by Microsemi Corporation. It is a high-power insulated gate bipolar transistor (IGBT) that operates @ a maximum voltage of 600V and a current of 183A.

  • Type: IGBT
  • Maximum Voltage: 600V
  • Current: 183A
  • Application: High-Power Switching
  • Applications: Motor Control, Power Supplies, Welding Equipment
  • Features: Low On-Resistance, Fast Switching Times, High Input/Output Isolation

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