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APT11N80BC3G

Part No APT11N80BC3G
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 800V 11A TO-247 / Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-247 Tube
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Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube
Channel Type Type N
Technology MOSFET
Drain Source Voltage 800V
Current - Continuous Drain (Id) @ 25°C 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 3.9V @ 680μA
Gate Charge (Qg) (Maximum) @ Vgs 60nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 1585pF @ 25V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 156W (Tc)
Rds On (Maximum) @ Id, Vgs 450 mOhm @ 7.1A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting Style Through Hole
Manufacturer Package TO-247 [B]
Package TO-247-3
Win Source Part Number 768663-APT11N80BC3G
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Family Name APT11N80BC3G
Introduction Date April 27, 2004
ECCN EAR99
Estimated EOL Date 2025
Ultra Librarian 3D Model Ultra Librarian APT11N80BC3G CAD Model

Description

The APT11N80BC3G is a MOSFET transistor manufactured by Microsemi Corporation.

  • Maximum Voltage: 800V
  • Continuous Drain Current @ 25°C: 11A
  • Package Type: TO-247-3
  • Mounting Type: Through-hole
  • Gate Charge @ 10V: 60nC
  • Input Capacitance @ 25V: 1585pF
  • Maximum Power Dissipation @ Tc: 156W
  • Channel Type: N
  • Maximum Vgs: ±20V
  • Rds On @ 7.1A and 10V: 450 mOhm
  • Alternative Parts: SPW11N80C3FKSA1, SPW11N80C3XK, SPW11N80C3CKSA1, SPW11N80C3
  • Applications: Discrete Semiconductor Products

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3539 $58.8475
60+ $1.9312 $115.8720
93+ $1.8711 $174.0123
128+ $1.8110 $231.8080
166+ $1.7498 $290.4668
221+ $1.5696 $346.8816
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,000 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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