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Same model may have multiple batches, images only for reference.
APT35GA90BD15 Real Image
Same model may have multiple batches, images only for reference.

APT35GA90BD15

Part No APT35GA90BD15
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 900V 63A 290W TO247
Datasheet
APT35GA90BD15 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type PT
VCEO Maximum Collector-Emitter Breakdown Voltage 900V
Maximum Current Collector 63A
Pulsed Collector Current 105A
Collector-emitter saturation voltage(Max) 3.1V @ 15V, 18A
Maximum Power Dissipation 290W
Total Switching Energy(Ets) 642μJ (on), 382μJ (off)
Input Type Standard
Gate Charge 84nC
Turn-on and Turn-off delay time 12ns/104ns
Testing Conditions 600V, 18A, 10 Ohm, 15V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 051460-APT35GA90BD15
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian APT35GA90BD15 CAD Model

Description

APT35GA90BD15 - Gallium Nitride Power Integrator

Offering cutting-edge GaN technology, the APT35GA90BD15 is ideal for maximizing power efficiency in demanding applications.

  • Applications: Data centers, Telecommunications equipment, Aerospace systems
  • Features: GaN technology, High efficiency, Minimal thermal dissipation
  • Benefits: Improves energy savings, Reduces system size, Enhances device lifetime

A high-performance solution for compact and energy-efficient systems.

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