The APT40SM120B is a N-Channel SiCFET (Silicon Carbide) transistor manufactured by Microsemi Corporation. It features a Drain to Source Voltage (Vdss) of 1200V and a Drive Voltage (Max Rds On, Min Rds On) of 20V. The FET Type is N-Channel and the maximum Rds On at Id, Vgs is 100mOhm at 20A, 20V. The Gate Charge (Qg) (Maximum) at Vgs is 130nC at 20V and the Input Capacitance (Ciss) (Maximum) at Vds is 2560pF at 1000V. The FET is mounted through hole and comes in a TO-247 supplier device package. It has a power dissipation (maximum) of 273W (Tc) and can handle a continuous drain current (Id) at 25°C of 41A (Tc). The FET is obsolete (End of Life) and its supply and demand status is limited. The MSL level is 1 (Unlimited).