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APT50GN60BG

Part No APT50GN60BG
Manufacturer Microsemi Corporation
Catalog IGBTs - Single
Description IGBT 600V 107A 366W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 107A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 1.85V @ 15V, 50A
Maximum Power Dissipation 366W
Total Switching Energy(Ets) 1185μJ (on), 1565μJ (off)
Input Type Standard
Gate Charge 325nC
Turn-on and Turn-off delay time 20ns/230ns
Testing Conditions 400V, 50A, 4.3 Ohm, 15V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247 [B]
Win Source Part Number 1018071-APT50GN60BG
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian APT50GN60BG CAD Model

Description

The Microsemi Corporation APT50GN60BG IGBT is a high-quality insulated-gate bipolar transistor designed for use in electronic circuits.

  • Mounting Type: Through-Hole
  • Maximum Current Collector: 107A
  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Power Dissipation: 366W
  • Pulsed Collector Current: 150A
  • Collector-Emitter Saturation Voltage (Max): 1.85V @ 15V, 50A
  • Total Switching Energy (Ets): 1185μJ (on), 1565μJ (off)
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 230ns
  • Case/Package: TO-247 [B]
  • Testing Conditions: 400V, 50A, 4.3 Ohm, 15V

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $7.5045 $60.0360
19+ $6.1575 $116.9925
30+ $5.9651 $178.9530
41+ $5.7727 $236.6807
52+ $5.5803 $290.1756
70+ $5.0030 $350.2100
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Availability: 8,900 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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