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Same model may have multiple batches, images only for reference.
JAN2N2907A Real Image
Same model may have multiple batches, images only for reference.

JAN2N2907A

Part No JAN2N2907A
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP SMALL SIGNAL SILICON TRANSISTOR | TRANS PNP 60V 0.6A TO18
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type PNP
Current - Collector (Ic) (Maximum) 600mA
Voltage - Collector Emitter Breakdown (Maximum) 60V
Vce Saturation (Maximum) at Ib, Ic 1.6V at 50mA, 500mA
Current - Collector Cutoff (Maximum) 50nA
DC Current Gain (hFE) (Minimum) at Ic, Vce 100 at 150mA, 10V
Maximum Power 500mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18 (TO-206AA)
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191382-JAN2N2907A
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian JAN2N2907A CAD Model

Description

The JAN2N2907A is a PNP through-hole transistor manufactured by Microsemi Corporation.

  • Win Source Part Number: 1191382
  • Category: discrete semiconductor products category.
  • Collector Current (Ic): 600mA
  • Collector-Emitter Breakdown Voltage: 60V
  • Voltage Range: -65°C to 200°C
  • Package: packaged in bulk.
  • Supply and Demand Status: balanced.
  • Application: excellent choice for various discrete semiconductor applications.

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