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JAN2N3019

Part No JAN2N3019
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description LOW POWER NPN SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/391
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 500mV @ 50mA, 500mA
Current - Collector Cutoff (Maximum) 10μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce 50 @ 500mA, 10V
Power - Max 800mW
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-205AD, TO-39-3 Metal Can
Manufacturer Package TO-39
RoHS State Request Verification
Win Source Part Number 1191383-JAN2N3019
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Application Field Used in Industrial
Quantity per package 1
Family Name 2N3019
Introduction Date November 29, 2010
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2026
Ultra Librarian 3D Model Ultra Librarian JAN2N3019 CAD Model

Description

The Microsemi Corporation JAN2N3019 is a military-grade NPN transistor that is part of the MIL-PRF-19500/391 series.

  • Mounting Type: Through Hole
  • Maximum Power: 800mW
  • Current: 1A
  • Voltage Breakdown: 80V
  • Package: TO-205AD, TO-39-3 Metal Can
  • Suitable for: Applications that require a military-grade NPN transistor with a voltage breakdown of 80V

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $14.3617 $57.4468
9+ $11.7839 $106.0551
14+ $11.4157 $159.8198
19+ $11.0474 $209.9006
24+ $10.6792 $256.3008
32+ $9.5745 $306.3840
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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