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Same model may have multiple batches, images only for reference.
JAN2N3439 Real Image
Same model may have multiple batches, images only for reference.

JAN2N3439

Part No JAN2N3439
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 350V 1A
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Active
Transistor Polarity NPN
Maximum Current Collector 1A
VCEO Maximum Collector-Emitter Breakdown Voltage 350V
Max Vce (sat) 500mV @ 4mA, 50mA
Collector Cut-off Current(Max) 2μA
Typical Gain (hFE) (Min) 40 @ 20mA, 10V
Maximum Power Dissipation 800mW
Temperature Range - Operating -65°C to 200°C (TJ)
Mounting Through Hole
Case / Package TO-39 (TO-205AD)
Win Source Part Number 133930-JAN2N3439
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N3439 CAD Model

Description

The Microsemi Corporation JAN2N3439 is an NPN transistor that is designed to handle low voltage and current. It has a voltage rating of 350V and a maximum current collector of 1A.

  • Typical gain: 40 @ 20mA and 10V.
  • Packaged in a: TO-39 (TO-205AD) case.
  • Popularity: medium.
  • Supply and demand status: limited.

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