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Same model may have multiple batches, images only for reference.
JAN2N3700 Real Image
Same model may have multiple batches, images only for reference.

JAN2N3700

Part No JAN2N3700
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description TRANS NPN 80V 1A / LOW POWER NPN SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 1A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) at Ib, Ic 500mV at 50mA, 500mA
Current - Collector Cutoff (Maximum) 10nA
DC Current Gain (hFE) (Min) at Ic, Vce 50 at 500mA, 10V
Power - Max 500mW
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Through Hole
Manufacturer Package TO-206AA, TO-18-3 Metal Can
Supplier Device Package TO-18
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811446-JAN2N3700
Ultra Librarian 3D Model Ultra Librarian JAN2N3700 CAD Model

Description

The JAN2N3700 is an NPN transistor manufactured by Microsemi Corporation.

  • Transistor Type: NPN
  • Package: TO-18-3 metal can
  • Maximum Power: 500mW
  • Popularity: Medium
  • Supply and Demand: Limited
  • Device Package: TO-206AA
  • Manufacturer Package: TO-18
  • DC Current Gain (hFE): 50 @ 500mA, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
8+ $6.3077 $50.4616
20+ $5.1755 $103.5100
30+ $5.0138 $150.4140
42+ $4.8520 $203.7840
54+ $4.6903 $253.2762
72+ $4.2051 $302.7672
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 200 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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