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Same model may have multiple batches, images only for reference.
JAN2N3716
Same model may have multiple batches, images only for reference.

JAN2N3716

Part No JAN2N3716
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description NPN HIGH POWER SILICON TRANSISTOR
Sample
Rohs State Need to verify
ECAD Module
Need Help

Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Series Military, MIL-PRF-19500/408
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 10A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) @ Ib, Ic 2.5V @ 2A, 10A
Current - Collector Cutoff (Maximum) 1mA
DC Current Gain (hFE) (Minimum) @ Ic, Vce 30 @ 3A, 2V
Power - Max 5W
Operating Temperature Range -65°C ~ 200°C (TJ)
Mounting Style Through Hole
Package TO-3
Manufacturer Package TO-3 (TO-204AA)
Win Source Part Number 1191388-JAN2N3716
Manufacturer Homepage www.microsemi.com
Family Name 2N3716
Introduction Date November 19, 1998
ECCN EAR99
Country of Origin Philippines
Estimated EOL Date 2025
Popularity Medium
Supply and Demand Status Balance
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N3716 CAD Model

Description

The Microsemi Corporation 2N3716 is a military-grade NPN transistor that is ideal for use in various discrete semiconductor products.

  • Manufacturer: Microsemi Corporation
  • Maximum Power Rating: 5W
  • Maximum Collector-Emitter Breakdown Voltage: 80V
  • Current Gain: 30 @ 3A and 2V
  • Collector Current Cutoff: 1mA
  • Mounting Type: Through Hole
  • Package: TO-3
  • Operating Temperature Range: -65°C to 200°C (TJ)
  • Packaging: Bulk

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