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JAN2N4239

Name: JAN2N4239
Brand: Microsemi Corporation
SKU: 165819
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	JAN2N4239
Manufacturer	Microsemi Corporation
Catalog	Transistors (BJT) - Single
Description	TRANS NPN 80V 1A TO39
Sample
Rohs State	Need to verify
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Microsemi Corporation
Packaging	Bulk
Status	Active
Transistor Polarity	NPN
Maximum Current Collector	1A
VCEO Maximum Collector-Emitter Breakdown Voltage	80V
Max Vce (sat)	600mV @ 100mA, 1A
Collector Cut-off Current(Max)	100nA (ICBO)
Typical Gain (hFE) (Min)	30 @ 250mA, 1V
Maximum Power Dissipation	1W
Temperature Range - Operating	-65°C to 200°C (TJ)
Mounting	Through Hole
Case / Package	TO-39 (TO-205AD)
Win Source Part Number	135217-JAN2N4239
Popularity	Medium
Supply and Demand Status	Limited
Quantity per package	1
Ultra Librarian 3D Model	Ultra Librarian JAN2N4239 CAD Model

Alternative Products

Description

The Microsemi Corporation JAN2N4239 is an NPN transistor with a maximum collector-emitter breakdown voltage of 80V and a maximum current collector of 1A. It has a collector cut-off current of 100nA and a typical gain (hFE) of 30 @ 250mA and 1V.

Maximum power dissipation: 1W.
Maximum Vce (sat): 600mV @ 100mA, 1A.
Package: TO-39 (TO-205AD).
Operating temperature range: -65°C to 200°C (TJ).
Category: Discrete Semiconductor Products.
Status: active.
Supply and demand status: limited.
Quantity per package: one transistor.

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