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Same model may have multiple batches, images only for reference.
JAN2N7225U
Same model may have multiple batches, images only for reference.

JAN2N7225U

Part No JAN2N7225U
Manufacturer Microsemi Corporation
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH TO-267AB
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 27.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 115nC @ 10V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 4W (Ta), 150W (Tc)
Maximum Rds On at Id,Vgs 105 mOhm @ 27.4A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package TO-267AB
Dimension TO-267AB
Win Source Part Number 141234-JAN2N7225U
Popularity Medium
Supply and Demand Status Limited
Quantity per package 1
Ultra Librarian 3D Model Ultra Librarian JAN2N7225U CAD Model

Description

The Microsemi Corporation JAN2N7225U is an obsolete (EOL) product that is perfect for various electronic applications.

  • Technology: MOSFET
  • Polarity: N-channel
  • Mounting Technology: SMD (SMT)
  • Win Source Part Number: 141234-JAN2N7225U
  • Power Dissipation: 4W (Ta), 150W (Tc)
  • Maximum Gate- Source Voltage: ±20V
  • Maximum Rds on @ Id, Vgs: 105 mOhm @ 27.4A, 10V
  • Package: TO-267AB

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