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Same model may have multiple batches, images only for reference.
JANTXV2N3749 Microsemi Corporation
Same model may have multiple batches, images only for reference.

JANTXV2N3749

Part No JANTXV2N3749
Manufacturer Microsemi Corporation
Catalog Transistors (BJT) - Single
Description PNP POWER SILICON TRANSISTOR | TRANS NPN 80V 5A TO111
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Microsemi Corporation
Packaging Bulk
Transistor Type NPN
Current - Collector (Ic) (Maximum) 5A
Voltage - Collector Emitter Breakdown (Maximum) 80V
Vce Saturation (Maximum) at Ib, Ic 1.5V at 500mA, 5A
Current - Collector Cutoff (Maximum) 20μA
DC Current Gain (hFE) (Minimum) at Ic, Vce 40 at 1A, 2V
Maximum Power 2W
Temperature Range - Operating -65°C ~ 200°C
Mounting Style Stud Mount
Manufacturer Package TO-111-4, Stud
Supplier Device Package TO-111
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 1191557-JANTXV2N3749
Manufacturer Homepage www.microsemi.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian JANTXV2N3749 CAD Model

Description

The JANTXV2N3749 is an NPN transistor manufactured by Microsemi Corporation.

  • Popularity: Medium
  • Supply and Demand: Limited
  • Suitability: Electronic circuits that require a high amount of power.
  • Recommendation: Use in electronic circuits that require a high voltage and current.
  • Pack Quantity: Single
  • Maximum Power: 2W
  • MSL Level: 1 (Unlimited)
  • Vce saturation (maximum) @ Ib, Ic: 1.5V @ 500mA, 5A
  • DC current gain (hFE) (minimum) @ Ic, Vce: 40 @ 1A, 2V

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