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JANTXV2N6802

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Part No	JANTXV2N6802
Manufacturer	Microsemi Corporation
Catalog	Transistors - FETs, MOSFETs - RF
Description	MOSFET N-CH 500V 2.5A TO205AF / N-Channel 500 V 2.5A (Tc) 800mW (Ta), 25W (Tc) Through Hole TO-205AF (TO-39)
Sample
Rohs State	Need to verify
ECAD Module
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Category	Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr	Microsemi Corporation
Series	Military, MIL-PRF-19500/557
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500 V
Current - Continuous Drain (Id) @ 25°C	2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	33 nC @ 10 V
Vgs (Max)	±20V
Power Dissipation (Max)	800mW (Ta), 25W (Tc)
Temperature Range - Operating	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-205AF (TO-39)
Package / Case	TO-205AF Metal Can
RoHS Status	RoHS non-compliant
MSL Level	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	150-JANTXV2N6802,JANTXV2N6802-ND,JANTXV2N6802-MIL
Standard Package	1
Win Source Part Number	1221867-JANTXV2N6802
Ultra Librarian 3D Model	Ultra Librarian JANTXV2N6802 CAD Model

Alternative Products

Description

The JANTXV2N6802 is a military-grade N-Channel MOSFET transistor.

Package: Bulk
Mounting Type: Through-Hole
Drain to Source Voltage (Max): 500V
Continuous Drain Current: 2.5A (Tc) @ 25°C
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250μA
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10V
Vgs (Max): ±20V
Operating Temperature: -55°C to 150°C (TJ)
HTSUS: 8541.29.0095
ECCN: EAR99
Product Status: Obsolete

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