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Same model may have multiple batches, images only for reference.
MS1227
Same model may have multiple batches, images only for reference.

MS1227

Part No MS1227
Manufacturer Microsemi Corporation
Catalog RF Transistors (BJT)
Description RF TRANS NPN 18V 30MHZ M113 / RF Transistor NPN 18V 4.5A 30MHz 80W Chassis Mount M113
Datasheet
MS1227 Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Manufacturer Microsemi Corporation
Packaging Bulk
Product Status Obsolete
Transistor Type NPN
Voltage - Collector Emitter Breakdown (Max) 18V
Frequency - Transition 30MHz
Gain 15dB
Power - Max 80W
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1A, 5V
Current - Collector (Ic) (Max) 4.5A
Temperature Range - Operating 200°C (TJ)
Mounting Chassis Mount
Case / Package M113
Supplier Device Package M113
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number MS1227-ND,150-MS1227
Standard Package 1
Win Source Part Number 1325617-MS1227
Ultra Librarian 3D Model Ultra Librarian MS1227 CAD Model

Description

The MS1227 is an NPN bipolar RF transistor from Microsemi Corporation.

  • Maximum Power: 80W
  • Collector-Emitter Breakdown Voltage: 18V
  • Current Rating: 4.5A
  • Gain: 15dB
  • DC Current Gain: 200 @ 1A and 5V
  • Frequency Transition: 30MHz
  • Supplier Device Package: M113
  • Application: RF amplifiers and oscillators
  • Popularity: Low
  • Status: Obsolete

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